S9018-H Datasheet

S9018-H

Datasheet specifications

Datasheet's name S9018-H
File size 75.697 KB
File type pdf
Number of pages 5

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Shandong Jingdao Microelectronics S9018-H
  • Transistor Type: NPN
  • Operating Temperature: -55°C~+150°C@(Tj)
  • Collector Current (Ic): 50mA
  • Power Dissipation (Pd): 200mW
  • Transition Frequency (fT): 800MHz
  • DC Current Gain (hFE@Ic,Vce): 100@1mA,5V
  • Collector Cut-Off Current (Icbo): 50nA
  • Collector-Emitter Breakdown Voltage (Vceo): 15V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@10mA,1mA
  • Package: SOT-23(TO-236)
  • Manufacturer: Shandong Jingdao Microelectronics

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